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| WBD301 Surface Monut Schottky Barrier Diode Silicon Hot-Carrier Diodes P b Lead(Pb)-Free Silicon HOT-CARRIER DETECTOR AND SWITCHING DIODES 30 VOLTS 3 1 2 Features: * Extremely Low Minority Carrier Lifetime - 15 ps(Typ). * Very Low Capacitance. -- 1.5pF(MaX)@VR = 15V * Low Reverse Leakage. -- IR = 13nAdc(Typ) * Schottky Barrier Diodes Encapsulated in SOT-23 Package. SOT-23 Applications: * For High Efficiency UHF and VHF Detector. * For Fast Switiching RF and Digital Applications. * For High-Volume Consumer and industrial / Commercial Requirement. SOT-23 Outline Dimensions A Unit:mm TOP VIEW B C E G H D K L J M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw 1/3 25-Oct-05 WBD301 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Characteristics Reverse Voltage Total Device Dissipation FR-5 Board(1), TA=25C Derate above 25C Operation Junction Temperature Range Junction and Storage Temperature Range Symbol VR PD TJ Tstg Value 30 200 2.0 -55 to +125 -55 to +150 Unit V mW mW/C C C ELECTRICAL CHARACTERISTICS Characteristics Reverse Breakdown Voltage IR = 10A Maximum instantneous Forward Voltage IF=1.0mA IF=10mA Reverse Leakage VR = 25V Diode Capacitance VR = 15V, f = 1.0MHz Symbol V(BR)R Min 30 Typ - Max - Unit V VF - 0.38 0.52 13 0.9 0.45 0.60 200 1.5 V IR CT - nA pF Device Marking Item WBD301 Marking 4T Eqivalent Circuit Diagram 3 1 WEITRON http://www.weitron.com.tw 2/3 25-Oct-05 WBD301 Electrical Characteristics Curves (Ta=25 C unless specified otherwise) Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime Figure 3. Reverse Leakage Figure 4. Forward Voltage Figure 5. Krakauer Method of Measuring Lifetime WEITRON http://www.weitron.com.tw 3/3 25-Oct-05 |
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